Growth and characterisation of Ga(NAsBi) alloy by metal-organic vapour phase epitaxy
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- 作者：Z.L. Bushella ; b ; zb00031@surrey.ac.uk" class="auth_mail ; P. Ludewiga ; N. Knauba ; Z. Batoolb ; K. Hildb ; W. Stolza ; S.J. Sweeneyb ; K. Volza
- 关键词：A3. Metal&ndash ; organic vapour phase epitaxy ; B1. Bismuth compounds ; B1. GaNAsBi ; B1. Nitrides ; B2. Semiconducting III&ndash ; V materials ; B2. Semiconducting quaternary alloys
- 刊名：Journal of Crystal Growth
- 出版年：15 June 2014
- 年：2014
- 卷：396
- 期：Complete
- 页码：79-84
- 全文大小：1649 K
文摘
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GaNAsBi MQWs and single layers grown by metal–organic vapour phase epitaxy.
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Linear relationship between N content and UDMHy supply, Bi content independent of N.
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Good chemical homogeneity and relatively sharp heterointerfaces can be achieved.
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Photoreflectance spectroscopy shows reduction of band gap by 141±22 meV/% N.