Thermodynamics of the Al–Ga–N₂ system

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• 作者：Andrey Belousov ; J. Karpinski ; B. Batlogg
• 关键词：A1. Phase diagrams ; A1. Thermodynamics ; B1. AlGaN ; B2. Semiconducting III&#x2013 ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2010
• 出版时间：1 September 2010
• 年：2010
• 卷：312
• 期：18
• 页码：2579-2584
• 全文大小：641 K

文摘

The thermodynamic properties of the Al–Ga–N₂ system under high N₂ pressure up to 10 kbar and 1800 °C are investigated. On the basis of the experimental p–T growth conditions for (Al,Ga)N crystals, the standard Gibbs free energy as well as the standard enthalpy and entropy of formation of the Al_xGa_1−xN crystals as a function of composition x were calculated. The a_N2–T and x–T phase diagrams for (Al,Ga)N are presented.