Carbon as an acceptor in cubic GaN/3C–SiC

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• 作者：A. Zado^a ; ^{a.zado@uni-paderborn.de"" rel=""nofollow} ; E. Tschumak^a ; J.W. Gerlach^b ; K. Lischka^a ; D.J. As^a
• 关键词：A1. Characterization ; A1. Doping ; A1. Semiconducting III&#x2013 ; V materials ; A3. Molecular beam epitaxy ; B1. Gallium compounds ; B1. Nitrides ; B2. Semiconducting gallium compounds
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 May 2011
• 年：2011
• 卷：323
• 期：1
• 页码：88-90
• 全文大小：265 K

文摘

We report on carbon doping of cubic GaN by CBr₄ using plasma-assisted molecular beam epitaxy. Cubic GaN:C samples were doped at different CBr₄ beam equivalent pressures between 2×10⁻⁹ and 6×10⁻⁶ mbar. The incorporated carbon concentration of up to 1×10²⁰ cm⁻³ was achieved in c-GaN:C as measured by secondary ion mass spectroscopy. The net donor/acceptor concentration was obtained by evaluation of capacitance-voltage data. Capacitance-voltage measurements on nominally undoped cubic GaN showed n-type conductivity. With an increase in CBr₄ flux the conductivity type changed to p-type and for highest CBr₄ flux an acceptor surplus of 1×10¹⁹ cm⁻³ was obtained. The electrical properties of the c-GaN:C layers were investigated by current–voltage measurements and a decrease in the serial conductance by two orders of magnitude was demonstrated in c-GaN:C. A blue shift of the 2 K donor–acceptor pair luminescence with an increase in carbon concentration was obtained.