MBE–VLS growth of catalyst-free III–V axial heterostructure nanowires on (1 1 1)Si substrates

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• 作者：Jihyun Paek ; ^a ; ^{j_paek@nuee.nagoya-u.ac.jp"" rel=""nofollow} ; Masahito Yamaguchi^a ; Hiroshi Amano^a
• 关键词：A1. Nanostructures ; A1. Nanowires ; A1. Heterostructure ; A3. Molecular beam epitaxy ; A3. Catalyst free ; B2. Semiconducting gallium arsenide
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 May 2011
• 年：2011
• 卷：323
• 期：1
• 页码：315-318
• 全文大小：346 K

文摘

For application in novel opto-electronic nanowire devices, Ga-assisted GaAs/In_xGa_1−xAs axial heterostructure nanowires grown on a (1 1 1)Si substrate at a high In/Ga flux ratio were investigated. The increased diameter of the In_xGa_1−xAs region of the nanowire was observed from a scanning electron microscopy image. The In composition of 0.01–0.02 of the In_xGa_1−xAs was shown by EDX point analysis. The In concentration of 0.62 of an In–Ga alloy droplet was estimated from the diameter ratio of the In_xGa_1−xAs/GaAs region. From these results, it was considered that the excess In was collected in the droplet, resulting in an increased nanowire diameter. The increased diameter of the In_xGa_1−xAs region was also discussed together with the results of thermodynamic calculation.