Migration-enhanced metal–organic chemical vapor deposition of Al_xIn_1−xN/GaN heterostructures (x>0.75) on c-plane sapphire

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• 作者：Daniel Billingsley^a ; ^{daniel@s-et.com"" rel=""nofollow} ; Jinwei Yang^a ; Remis Gaska^a ; Michael Shur^b
• 关键词：A3. Metal&#x2013 ; organic chemical vapor deposition ; B1. Nitrides ; B2. Semiconducting III&#x2013 ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 July 2011
• 年：2011
• 卷：327
• 期：1
• 页码：98-101
• 全文大小：1038 K

文摘

The growth and the characterization of Al_xIn_1−xN/GaN (x>0.75) heterostructures by migration-enhanced metal–organic chemical vapor deposition are optimized through variations in growth temperature and precursor modulation schemes, resulting in high quality films. Al_xIn_1−xN/GaN heterostructures were characterized by XRD reciprocal space mapping in order to calculate the relative strain to GaN as a function of indium composition. AFM measurements yielded an rms roughness value of 4 Å. By controlling indium incorporation, a maximum 2DEG mobility of 1270 cm²/V s, a maximum sheet charge density of 4.1×10¹³ cm⁻², and a minimum sheet resistance of 179.9 Ω/□ were obtained.