Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires

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• 作者：L. Lari^a ; ^d ; ^{l.lari@sheffield.ac.uk"" rel=""nofollow} ; T. Walther^a ; M.H. Gass^b ; L. Geelhaar^c ; ¹ ; C. Chè ; ze^c ; ¹ ; H. Riechert^c ; ¹ ; T.J. Bullough^d ; P.R. Chalker^d
• 关键词：A3. Molecular beam epitaxy ; B1. Nanomaterials ; B1. Nitrides ; B2. Semiconducting III&#x2013 ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2011
• 出版时间：15 July 2011
• 年：2011
• 卷：327
• 期：1
• 页码：27-34
• 全文大小：1727 K

文摘

A study of GaN–AlGaN nanowire heterostructures grown by molecular beam epitaxy on sapphire substrates is presented. Nanowire growth was promoted using nickel seeds formed by in-situ annealing of a Ni thin film. Deposition sequences were designed to form two nanowire samples with embedded alternating multilayers of GaN and Al_0.2Ga_0.8N of variable thicknesses. Subsequent analyses showed the formation of two types of nanostructures in both samples, namely long and tapered nanowires and short columnar structures with uniform diameters along the whole length. Ni seeds were found at the end of the long nanowires only, indicating a catalyst-induced growth mechanism. No Ni seeds were found at the top of columnar structures indicating a catalyst-free growth mechanism. Analytical electron microscopy techniques were applied to the study of the Al distribution along both types of nanostructures. The layered heterostructure was found only for the columnar structures, whereas in nanowires the mediation of the Ni seed led to an incorporation of Al varying at monolayer level unrelated to the deposition sequence. The Al to Ga concentration ratio was found to decrease from the central segment of the nanowires towards the tip. Residual radial growth was also found to interfere with the effective deposition of the multilayer NW heterostructures.