N-type doping strategies for InGaAs

详细信息    查看全文

• 作者：Henry Aldridge Jr^a ; ; Aaron G. Lind^a ; Cory C. Bomberger^b ; Yevgeniy Puzyrev^c ; Joshua M.O. Zide^b ; Sokrates T. Pantelides^c ; Mark E. Law^a ; Kevin S. Jones^a
• 关键词：III&ndash ; V semiconductors ; Semiconductor processing ; Thermal processing ; Dopant activation ; Dopant diffusion
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：57
• 期：Complete
• 页码：39-47
• 全文大小：905 K

文摘

Significant research effort has been placed into the use of III–V compound semiconductors, including InGaAs as channel materials in CMOS logic devices due to their superior electron mobilities compared to Si and other more conventional semiconductor materials. One of the major factors preventing industrial adoption of InGaAs as a channel material involves the minimization of source and drain contact resistances. To understand challenges to minimization of contact resistance, this work will outline the effectiveness of several doping approaches that have been attempted for n-type InGaAs including the use of silicon as a dopant and the effectiveness of each approach in achieving the highest level of activation possible. Previous and recently reported dopant diffusion behaviors are also included and discussed.