III-V nitrides and performance of graphene on copper plasmonic biosensor
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- 作者：Goutam Mohanty ; Bijaya Kumar Sahoo ; bksahoo.phy@nitrr.ac.in" class="auth_mail" title="E-mail the corresponding author
- 关键词：Plasmonic biosensor ; III-V nitride semiconductor ; Sensitivity ; Figure of merit ; Evanscent field enhancement
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：May 2016
- 年：2016
- 卷：93
- 期：Complete
- 页码：226-233
- 全文大小：1528 K
文摘
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Effect of semiconductors on performance of a graphene plasmonic biosensor has been explored.
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Figure of merit (FOM) of sensor has been computed.
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III-V nitride shows higher FOM than Si and Ge.
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Highest field enhancement is achieved for InN.
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III-V nitrides improve overall performance of graphene on copper plasmonic biosensor.