Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

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• 作者：D. Nd. Faye^a ; M. Fialho^a ; S. Magalhã ; es^a ; E. Alves^a ; N. Ben Sedrine^b ; J. Rodrigues^b ; M.R. Correia^b ; T. Monteiro^b ; M. Boćkowski^c ; V. Hoffmann^d ; M. Weyers^d ; K. Lorenz^a ; ^{lorenz@ctn.tecnico.ulisboa.pt" class="auth_mail" title="E-mail the corresponding author}
• 关键词：III nitrides ; Rare earth ; Europium ; Implantation ; LED
• 刊名：Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
• 出版年：2016
• 出版时间：15 July 2016
• 年：2016
• 卷：379
• 期：Complete
• 页码：251-254
• 全文大小：1249 K

文摘

An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p–n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.