Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH₃ molecular beam epitaxy

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• 作者：Young Kyun Noh^a ; ^c ; ^{young.k.noh@gmail.com} ; Sang Tae Lee^b ; Moon Deock Kim^b ; Jae Eung Oh^a
• 关键词：A1.Characterization ; A1.Doping ; A3.Molecular beam epitaxy ; B1.Nitrides ; B2.Semiconducting III-V materials ; B3. Heterojunction semiconductor devices
• 刊名：Journal of Crystal Growth
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：460
• 期：Complete
• 页码：37-41
• 全文大小：915 K
• 卷排序：460

文摘

Efficient Fe doping into GaN achieved using solid Fe source in NH3 MBE growth. Semi-insulating (S.I.) GaN buffer is realized by adding Fe impurities. The low-temperature PL spectra of Fe:GaN enhanced DAP transition. It implies that Fe compensates the residual donors to achieve the S.I. properties.