Properties of InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors modified by surface treatment

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• 作者：D. Gregu&scaron ; ová ; ^a ; ^{Dagmar.Gregusova@savba.sk} ; ^{elekgreg@savba.sk} ; F. Gucmann^a ; R. Kú ; dela^a ; M. Miču&scaron ; í ; k^b ; R. Stoklas^a ; L. Vá ; lik^a ; J. Gregu&scaron ; ^c ; M. Blaho^a ; P. Kordo&scaron ; ^d
• 关键词：Surface treatment ; III&ndash ; V Semiconductors ; Gallium arsenide ; Heterostructure field effect transistors ; Transistor characteristics ; Trap state density
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：395
• 期：Complete
• 页码：140-144
• 全文大小：774 K
• 卷排序：395

文摘

AlGaAs/InGaAs/GaAs-based metal oxide semiconductor transistors-MOSHFET. Thin Al-layer deposited in-situ and oxidize in air – gate insulator. MOSHFET vs HFET transistor properties, density of traps evaluated.