Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

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• 作者：Dongqi Xiao^a ; Gang He^a ; ^{hegang@ahu.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Zhaoqi Sun^a ; Jianguo Lv^b ; ^{jglv@hftc.edu.cn" class="auth_mail" title="E-mail the corresponding author} ; Peng Jin^a ; Changyong Zheng^a ; Mao Liu^c ; ^{mliu@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：C. Electrical properties ; Metal-oxide-semiconductor ; Sol&ndash ; gel ; Conduction mechanisms ; High-k gate dielectrics
• 刊名：Ceramics International
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：42
• 期：1
• 页码：759-766
• 全文大小：1842 K

文摘

Solution-processed high-k gate dielectrics for metal-oxide-semiconductor (MOS) capacitor have been widely investigated with the objective of achieving high performance field effect transistors (FETs) for next-generation microelectronic device. In current work, the effect of postdeposition annealing temperature on the microstructure, optical and electrical properties of peroxo-zirconium oxide (ZrO₂) gate dielectrics fabricated by a simple spin-coating method has been studied systemically. By means of characterization of spectroscopy ellipsometry and ultraviolet–visible spectroscopy, the thicknesses and optical constants of ZrO₂ gate dielectrics have been determined precisely. The annealing temperature dependent electrical properties of ZrO₂ films were determined by capacitance–voltage (C–V) and leakage current density–voltage (J–V) measurements. Based on the implementation as gate insulator, the solution-processed ZrO₂-based MOS capacitor showed good and stable performances during annealing at 700 °C. As a result, the dominant leakage conduction mechanism for optimized 700 °C-annealed sample has been discussed in detail. Our results show the possibility of the solution-processed ZrO₂ dielectric layer as a gate insulator for application in MOSFETs.