Influence of composition and processing parameters on the properties of solution-processed aluminum phosphate oxide (AlPO) thin films

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• 作者：Kevin M. Norelli^a ; Paul N. Plassmeyer^a ; Keenan N. Woods^a ; Benjamin A. Glassy^a ; Christopher C. Knutson^b ; Matt Beekman^c ; Catherine J. Page^a ; ^{cpage@uoregon.edu" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Amorphous ; Aqueous ; Dielectrics ; Solution-processed ; Thin films ; Aluminum phosphate
• 刊名：Solid State Sciences
• 出版年：2016
• 出版时间：May 2016
• 年：2016
• 卷：55
• 期：Complete
• 页码：8-12
• 全文大小：613 K

文摘

The effects of precursor solution concentration, composition, and spin-processing parameters on the thickness and electrical properties of ultra-smooth aluminum oxide phosphate (Al₂O_3−3x(PO₄)_2x or “AlPO”) thin films prepared using aqueous solutions are reported. Compositions were verified by electron probe micro-analysis and range from Al₂O_1.5(PO₄) to AlPO₄ (x = P:Al from 0.5 to 1.0). Film thicknesses were determined using X-ray reflectivity measurements and were found to depend systematically on solution concentration, P:Al ratio, and spin-speed. Metal-insulator-semiconductor devices were fabricated to determine electrical properties as a function of composition. As the P:Al ratio increased from 0.5 to 1.0, the dielectric constant decreased from 6.0 to 4.6, leakage currents increased from 0.45 to 65 nA cm⁻² at 1 MV cm⁻¹ and dielectric breakdown (defined as leakage currents >10 μA cm⁻²) decreased from 9.74 to 2.84 MV cm⁻¹. These results establish composition, concentration, and spin-speed for the production of AlPO films with targeted thicknesses and electrical properties.