CdSxTe1-x ternary semiconductors band gaps calculation using ground state and GW approximations
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- 作者：Nawal Kheloufi ; Abderrazak Bouzid ; a_bouzid34@hotmail.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：Pseudopotential ; Semicore states ; Ab initio calculations ; GW approximation ; Quasiparticle band gap
- 刊名：Journal of Alloys and Compounds
- 出版年：2016
- 出版时间：25 June 2016
- 年：2016
- 卷：671
- 期：Complete
- 页码：144-149
- 全文大小：1090 K
文摘
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The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced.
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The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation.
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All CdSxTe1-x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.