Detailed analysis and contact properties of low-voltage organic thin-film transistors based on dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and its didecyl and diphenyl derivatives
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- 作者：Ulrike Krafta ; b ; ukraft@stanford.edu" class="auth_mail" title="E-mail the corresponding author ; Kazuo Takimiyac ; Myeong Jin Kangd ; Reinhold Rö ; dela ; Florian Letzkuse ; Joachim N. Burghartze ; Edwin Weberb ; Hagen Klauka
- 关键词：Organic field-effect transistors ; Contact resistance ; Organic semiconductors ; Thin-film morphology ; Dinaphthothienothiophene (DNTT)
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：August 2016
- 年：2016
- 卷：35
- 期：Complete
- 页码：33-40
- 全文大小：2970 K
文摘
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Systematic comparison of low-voltage organic thin-film transistors based on pentacene, DNTT, C10-DNTT and DPh-DNTT.
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Study of morphology, effective and intrinsic mobilities, contact resistance and of the reproducibility of performance parameters.
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DPh-DNTT TFTs provide a smaller contact resistance than C10-DNTT and DNTT TFTs.
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This results in notably larger effective mobilities, especially in transistors with reduced channel lengths (L).
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For L = 1 µm, an on/off ratio of 108, a subthreshold swing of 100 mV/decade and an effective mobility of 0.68 cm2/Vs were measured.