Confined state energies in AGNR semiconductor-semiconductor heterostructure

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• 作者：Bo Fan ; Sheng Chang ; ^{changsheng@whu.edu.cn}
• 关键词：Graphene ; Semiconductor&ndash ; semiconductor heterostructure ; Confined state ; Energy gap
• 刊名：Physics Letters A
• 出版年：2017
• 出版时间：30 January 2017
• 年：2017
• 卷：381
• 期：4
• 页码：319-322
• 全文大小：1308 K
• 卷排序：381

文摘

A graphene structure called SSH is proposed, which is combined with 3m and 3m+13m+1 families AGNRs. Simulation results reveal that energy gap of SSH is continuously and analytically tunable with the increase of N1/N. SSH's tunable energy gap can be attributed to the quantum well localization effect induced by SSH's two different families AGNRs.