Transient and modulated charge separation at CuInSe₂/C₆₀ and CuInSe₂/ZnPc hybrid interfaces

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• 作者：Natascha von Morzé ; ^{natascha.von_morze@helmholtz-berlin.de} ; Thomas Dittrich ^{dittrich@helmholtz-berlin.de} ; Wolfram Calvet ^{wolfram.calvet@helmholtz-berlin.de} ; Iver Lauermann ^{iver.lauermann@helmholtz-berlin.de} ; Marin Rusu ; ^{rusu@helmholtz-berlin.de}
• 关键词：CuInSe2 ; C60 ; ZnPc ; Surface photovoltage ; XPS ; UPS
• 刊名：Applied Surface Science
• 出版年：2017
• 出版时间：28 February 2017
• 年：2017
• 卷：396
• 期：Complete
• 页码：366-374
• 全文大小：1150 K
• 卷排序：396

文摘

Surface physical properties of non- and Na-treated CuInSe2 layers studied. Evidence of exciton dissociation and charge separation at CuInSe2/ZnPc interface. Strong band bending at the CuInSe2 surface in contact with C60 observed. No evidence for exciton dissociation at the CuInSe2/C60 interface found. Cu-poor phase at CuInSe2/organic interface crucial for charge separation.