Interface-induced two-step RESET for filament-based multi-level resistive memory
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- 作者：Fang Yuan ; fyuan@mail.tsinghua.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Shanshan Shen ; Zhigang Zhang ; Liyang Pan ; Jun Xu
- 关键词：Multi-level resistive switching ; Two-step RESET ; Conductive filament ; RRAM ; Interface
- 刊名：Superlattices and Microstructures
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：91
- 期：Complete
- 页码：90-97
- 全文大小：2249 K
文摘
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A unique two-step RESET behavior of bilayer RRAM devices is investigated.
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A filament-based switching mechanism combined with the electron hopping theory is proposed.
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The two-step RESET is attributed to the interface between the two oxide layers.
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The device shows good multi-level resistive switching performance and reliability.