Nonvolatile rewritable memory device based on solution-processable graphene/poly(3-hexylthiophene) nanocomposite

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• 作者：Li Zhang ; Ye Li ; Jun Shi ; Gaoquan Shi ; Shaokui Cao
• 关键词：Composite materials ; Thin films ; Coatings ; Galvanometry measurements ; Electrical properties
• 刊名：Materials Chemistry and Physics
• 出版年：2013
• 出版时间：15 November, 2013
• 年：2013
• 卷：142
• 期：2-3
• 页码：626-632
• 全文大小：1629 K

文摘

An electrically bistable device utilizing a nanocomposite of hexadecylamine-functionalized graphene oxide (HDAGO) with poly(3-hexylthiophene) (P3HT) is demonstrated. The device has an ITO/P3HT-HDAGO/Al sandwich structure, in which the composite film of P3HT-HDAGO was prepared by simple solution phase mixing of the exfoliated HDAGO monolayers with P3HT matrix and a spin-coating method. The memory device exhibits typical bistable electrical switching behavior and a nonvolatile rewritable memory effect, with a turn-on voltage of about 1.5?V and an ON/OFF-state current ratio of 10⁵. Under ambient conditions, both the ON and OFF states are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage of 1?V. The conduction mechanism is deduced from the modeling of the nature of currents in both states, and the electrical switching behavior can be attributed to the electric-field-induced charge transfer between P3HT and HDAGO nanosheets.