文摘
In this paper, the electroless deposited NiCrB thin film was mainly in the form of NiB, CrB2 compounds and elementary Ni. The sheet resistance of NiCrB thin film was 3.043 Ω/□, it is smaller than that of the widely used Ta, TaN and TiN diffusion barrier layers. Annealing experiments showed that the failure temperature of NiCrB thin film regarding Cu diffusion was 900 °C. NiCrB barrier layer crystallized after 900 °C annealing, Cu grains arrived at Si-substrate through grain boundaries, resulting in the formation of Cu3Si. Eelectroless deposited NiCrB film also had good oxidation resistance, it is expected to become an anti-oxidant layer of copper interconnection.