Current saturation effect for pentacene-based static induction transistor under negative drain-source and gate voltages
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- 作者：Dan Yanga ; Shengyi Yanga ; b ; bitysy@hotmail.com" class="auth_mail" title="E-mail the corresponding author ; syyang@bit.edu.cn" class="auth_mail" title="E-mail the corresponding author ; Li Zhangc ; Yishan Wanga ; Chunjie Fua ; Taojian Songa ; Ruibin Liua ; Bingsou Zoua
- 关键词：Organic static induction transistor (OSIT) ; Rectifying property ; Current saturation effect ; Pentacene
- 刊名：Organic Electronics
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：31
- 期：Complete
- 页码：273-277
- 全文大小：1109 K
文摘
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OSIT ITO/Pentacene/Al/Pentacene/Au under negative VDS and VG is characterized.
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Current saturation effect of the pentacene OSIT under negative VDS and VG is seen.
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VON moved to larger negative voltages with increasing negative VG.
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The movement step of VG gets smaller after keeping the device for enough time.
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The possible mechanisms for such a kind of current modulation are discussed.