Influence of oxygen pressure on Nd:LuVO₄ films grown by pulsed laser deposition

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• 作者：Hongxia Li ; Jiyang Wang ; Huaijin Zhang ; Guangwei Yu ; Xiaoxia Wang ; Liang Fang ; Mingrong Shen ; Zhaoyuan Ning ; Hua Xu ; Shiling Li et al.
• 关键词：A. Thin films ; B. Laser deposition ; C. Atomic force microscopy ; C. X-ray diffraction
• 刊名：Materials Research Bulletin
• 出版年：2005
• 出版时间：2005
• 年：2005
• 卷：40
• 期：11
• 页码：1915-1921
• 全文大小：185 K

文摘

High quality Nd-doped lutecium vanadate thin films on silica glass substrates were fabricated successfully by using a pulsed laser deposition technique. The properties of the samples were characterized by using X-ray diffraction, Rutherford backscattering, atomic force microscopy (AFM), and prism-coupling measurements. The RBS shows that the ratio of Lu/V in the film is 0.991, which is in good agreement with the target composition. X-ray diffraction results show that the degree of crystal orientation along (2 0 0) increases with increasing oxygen pressure up to 20 Pa. The refractive indices of the films determined with dark-mode prism coupling measurements are slight, smaller than that of the bulk crystal. An optimum 20 Pa oxygen pressure, at which the oxygen was leaked into the chamber as the reactive ambient, was determined.