Comparison of ZnO:B and ZnO:Al layers for Cu(In,Ga)Se2 submodules
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- 作者：Takashi Koida ; t-koida@aist.go.jp" class="auth_mail" title="E-mail the corresponding author ; Jiro Nishinaga ; Hirohumi Higuchi ; Atsuko Kurokawa ; Masayuki Iioka ; Yukiko Kamikawa-Shimizu ; Akimasa Yamada ; Hajime Shibata ; Shigeru Niki
- 关键词：Photovoltaic cells ; Photovoltaic modules ; Chalcopyrite compound ; Transparent conductive oxide ; Zinc oxide
- 刊名：Thin Solid Films
- 出版年：2016
- 出版时间：1 September 2016
- 年：2016
- 卷：614
- 期：part_PB
- 页码：79-83
- 全文大小：613 K
文摘
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Direct comparison between Cu(In,Ga)Se2 sub-modules employing ZnO:B and ZnO:Al.
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Higher current density and conversion efficiency in the ZnO:B module
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Lower parasitic absorption owing to free carriers in the ZnO:B module.
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Comparable series resistance between the ZnO:B and ZnO:Al modules