Design of optical memory elements based on n-type organic field-effect transistors comprising a light-sensitive spirooxazine layer

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• 作者：Alisa A. Rezvanova ; Lyubov A. Frolova ; Pavel A. Troshin ; ^{troshin2003@inbox.ru" class="auth_mail" title="E-mail the corresponding author}
• 刊名：Mendeleev Communications
• 出版年：2016
• 出版时间：January-February 2016
• 年：2016
• 卷：26
• 期：1
• 页码：26-28
• 全文大小：393 K

文摘

The design of high-speed optical memory elements based on organic field-effect transistors comprising [60]fullerene as an n-type semiconductor and 1,3-dihydro-1,3,3-trimethylspiro(2m>Hm>-indole-2,3m>’m>-[3m>Hm>]naphth[2,1-m>bm>][1,4]oxazine) as a light-sensitive component placed at the interface with an aluminum oxide gate dielectric has been developed. The memory elements exhibit a switching coefficient of ∼10⁴ and a minimal programming time of 0.5–1.5 ms.