Characteristics of 4HaaaSiC MOS interface annealed in N₂O

详细信息    查看全文

• 作者：Fujihira ; Keiko ; Tarui ; Yoichiro ; Imaizumi ; Masayuki ; Ohtsuka ; Ken-ichi ; Takami ; Tetsuya ; Shiramizu ; Tatsuya ; et. al.
• 关键词：Silicon carbide ; Oxidation ; Nitridation ; Channel mobility ; Interface state density ; MOSFET
• 刊名：Solid State Electronics
• 出版年：2005
• 出版时间：June, 2005
• 年：2005
• 卷：49
• 期：6
• 页码：896-901
• 全文大小：377 K

文摘

4H–SiC(0 0 0 1) MOSFET annealed in N₂O at below 1150 °C is systematically investigated. Inversion-type planar MOSFETs show higher channel mobility and lower threshold voltage by increasing anneal temperature. Through C–V measurement of n-type MOS capacitors, the interface state density is revealed to decrease at higher anneal temperature. The field effect mobility of 30 cm²/Vs is achieved by 1150 °C anneal for 3 h, which is about 10 times higher than that of not annealed MOSFET. Epitaxial n-channel MOSFET annealed in N₂O has been also fabricated. A positive threshold voltage of 0.46 V and the field effect mobility of 45 cm²/Vs are attained. The effective mobility at 2.5 MV/cm is 34 cm²/Vs, which is five times higher than that for not annealed sample, suggesting that the N₂O anneal improves the MOS interface quality.