Structural and optical properties of nearly stress-free m

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• 作者：Hui Lin ; Shengming Zhou ; Hao Teng ; Xiaorui Hou ; Tingting Jia ; Shulin Gu ; Shunming Zhu ; Zili Xie ; Ping Han ; Rong Zhang ; Ke Xu
• 关键词：m-Plane ZnO thin film ; Semiconductor compounds ; Chemical vapor deposition ; Residual stress ; Photoluminescence spectra
• 刊名：Applied Surface Science
• 出版年：2009
• 出版时间：30 August 2009
• 年：2009
• 卷：255
• 期：22
• 页码：9146-9148
• 全文大小：163 K

文摘

m-plane ZnO film was epitaxially deposited on (1 0 0) γ-LiAlO₂ by metal-organic chemical vapor deposition at 600 °C with a GaN buffer layer. The epitaxial relationships between ZnO and GaN, GaN and (1 0 0) γ-LiAlO₂ were determined by X-ray diffraction Φ-scans. There exhibits very small decrease for the E₂ mode shift (0.3 cm⁻¹) of ZnO in the Raman spectrum, which indicates the epitaxial ZnO film was under a slight tensile stress (5.77 × 10⁷ Pa). Unlike the highly strained a-plane ZnO, temperature dependent photoluminescence spectra show that the free A exiton emission was observed with the temperature ≤138 K.