Characterization of m
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- 作者：Hui Lin ; Shengming Zhou ; Taohua Huang ; Hao Teng ; Xuedong Liu ; Shulin Gu ; Shunming Zhu ; Zili Xie ; Ping Han ; Rong Zhang
- 关键词：Semiconductors ; X-ray diffraction ; Anisotropy
- 刊名：Journal of Alloys and Compounds
- 出版年：2009
- 出版时间：7 January 2009
- 年：2009
- 卷：467
- 期：1-2
- 页码：L8-L10
- 全文大小：288 K
文摘
Non-polar m-plane ZnO thin film has been prepared on γ-LiAlO2(1 0 0)substrate via the low pressure metal organic chemical vapor deposition. Obvious intensity variation of the E2 mode in the polarized Raman spectra and the absorption edge shift in the polarized optical transmission spectra indicate that the m-plane film exhibits optical anisotropy, which have applications in certain optical devices, such as the UV modulator and polarization-dependent beam switch. From the atomic force microscopy images, highly-oriented uniform-sized grains of rectangular shape were observed.