Quantitative analysis of Si/SiGeC superlattices using atom probe tomography
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- 作者：Robert Estivilla ; b ; c ; robert.estivillstroud@cea.fr" class="auth_mail" title="E-mail the corresponding author ; Adeline Greniera ; Sé ; bastien Duguayc ; Franç ; ois Vurpillotc ; Tanguy Terliera ; b ; Jean-Paul Barnesa ; b ; Jean-Michel Hartmanna ; b ; Didier Blavettec
- 关键词：Atom Probe ; SiGeC ; Superlattices ; Carbon precipitation ; Local magnification
- 刊名：Ultramicroscopy
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：159
- 期：part_P2
- 页码：223-231
- 全文大小：6696 K
文摘
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As-grown and annealed Si/SiGeC superlattices were analysed by atom probe tomography.
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The as-grown sample was studied to establish the best analysis conditions.
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Annealed samples show formation of carbon rich clusters (2 s at 950 °C and 1050 °C).
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APT shows the initial stages of precipitation at 950 ºC, undetected by other techniques.