Full-Band Monte Carlo investigation of hole mobilities in SiGe, SiC and SiGeC alloys

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• 作者：M. Michaillat ; D. Rideau ; F. Aniel ; C. Tavernier ; H. Jaouen
• 关键词：SiGe ; SiGeC ; Monte Carlo ; Mobility ; Hole
• 刊名：Thin Solid Films
• 出版年：2010
• 出版时间：26 February 2010
• 年：2010
• 卷：518
• 期：9
• 页码：2437-2441
• 全文大小：491 K

文摘

Hole transport properties in relaxed and biaxially strained Si_1-xGe_x, Si_1-yC_y and Si_1-x-yGe_xC_y alloys are investigated using a Full-Band Monte Carlo simulator. Our results allow the extraction of bulk, in-plane and out-of-plane hole drift mobilities. Doping effects in SiGeC alloys are taken into account through an efficient ionized-impurity scattering model. This model is based on inverse momentum relaxation times derived from phase-shift theory.¹ A new alloy scattering model relevant to the case of random ternary alloys is presented. It involves two effective alloy potential parameters, which account for the respective scattering strengths of Ge and C in the crystal lattice. From our mobility results we have derived an analytical hole mobility model which includes dependencies upon doping concentration, doping type, Ge content and C content.