Investigation of high-K gate stacks with epitaxial Gd₂O₃ and FUSI NiSi metal gates down to CET=0.86 nm

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• 作者：H.D.B. Gottlob ; T. Echtermeyer ; T. Mollenhauer ; J.K. Efavi ; M. Schmidt ; T. Wahlbrink ; M.C. Lemme ; H. Kurz
• 关键词：High-k ; Epitaxial dielectric ; Gd₂O₃ ; Metal gate ; Fully silicided (FUSI) ; NiSi ; TiN
• 刊名：Materials Science in Semiconductor Processing
• 出版年：2006
• 出版时间：December 2006
• 年：2006
• 卷：9
• 期：6
• 页码：904-908
• 全文大小：234 K

文摘

Novel gate stacks with epitaxial gadolinium oxide (Gd₂O₃) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densities down to 10^–7 A cm^–2 are observed at a capacitance equivalent oxide thickness of CET=1.8 nm. The influence of a titanium nitride (TiN) capping layer during silicidation is studied. Furthermore, films with an ultra-thin CET of 0.86 nm at a Gd₂O₃ thickness of 3.1 nm yield current densities down to 0.5 A cm⁻² at V_g=+1 V. The extracted dielectric constant for these gate stacks ranges from k=13 to 14. These results emphasize the potential of NiSi/Gd₂O₃ gate stacks for future material-based scaling of CMOS technology.