文摘
Neodymium-doped silicon oxide thin films have been prepared by evaporation. Silicon nanocrystals are generated in the films by annealing post-treatments. Under indirect excitation, neodymium ions are sensitized by nanocrystals. Below 100 K, the neodymium-related photoluminescence intensity saturates. Saturation is explained by a decrease of the coupling efficiency with nanocrystals.