New process of silicon carbide purification intended for silicon passivation

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• 作者：M. Barbouche^a ; ^f ; ^{barbouchemed@gmail.com} ; R. Benabderrahmane Zaghouani^b ; N.E. Benammar^c ; V. Aglieri^d ; M. Mosca^d ; R. Macaluso^d ; K. Khirouni^e ; H. Ezzaouia^f
• 关键词：Silicon carbide ; Impurities ; Gettering ; ICP-AES ; Minority carrier lifetime ; Passivation
• 刊名：Superlattices and Microstructures
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：101
• 期：Complete
• 页码：512-521
• 全文大小：1184 K
• 卷排序：101

文摘

It's possible to produce porous SiC thin film by acid vapor etching. It's possible to improve the purity of SiC particles by a new method based on three steps:-Formation of porous SiC thin film by vapor etching.-Gettering of impurities from the volume to the surface by rapid thermal annealing.-Elimination of this porous thin film by chemical etching. Quality of purified SiC depends on time of vapor etching. Effective minority carrier lifetime increase after deposition of purified SiC into silicon substrate. Passivation of silicon is better with purified SiC than with no-purified SiC.