Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities
Fabrication of ultrathin SiO2 tunnel layers on c-Si. Correlation of electronic and chemical SiO2/Si interface properties revealed by XPS/SPV. Chemically abrupt SiO2/Si interfaces generate less interface defect states considerable.