Direct comparison of the electrical properties of multicrystalline silicon materials for solar cells: conventional p-type, n-type and high performance p-type
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- 作者：H.C. Sio ; kelvin.sio@anu.edu.au" class="auth_mail" title="E-mail the corresponding author ; D. Macdonald
- 关键词：Dislocation ; Grain boundary ; Multicrystalline silicon ; Photoluminescence imaging ; Recombination
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：144
- 期：Complete
- 页码：339-346
- 全文大小：2069 K
文摘
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We compare conventional p-type, n-type and high performance p-type mc-Si materials.
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Intra-grain regions, grain boundaries and dislocation networks are studied in depth.
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The influence of phosphorous gettering and hydrogenation are examined.
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n-type mc-Si has superior properties in intra-grain regions and grain boundaries.