The influence of In composition on properties of InxGa1-xAs/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance
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文摘
In situ monitoring of InxGa1-xAs/GaAs structures was performed by SR technique. Structural and morphological properties were studied by HRXRD and AFM tools. Evolution of dislocation density and grain size versus In composition was quantified. The x-dependence of growth process, hatching and islands densities, sizes was studied. Good correlation between experimental results issued from different tools was found.

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