Radiation hardness properties of full-3D active edge silicon sensors

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• 作者：C. Da Viá ; J. Hasi ; C. Kenney ; V. Linhart ; Sherwood Parker ; T. Slavicek ; S.J. Watts ; P. Bem ; T. Horazdovsky ; S. Pospisil
• 关键词：3D ; Silicon detectors ; Radiation hardness ; SLHC
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2008
• 出版时间：21 March 2008
• 年：2008
• 卷：587
• 期：2-3
• 页码：243-249
• 全文大小：474 K

文摘

Full-three-dimensional (3D) pixel sensors, with electrodes penetrating through the entire silicon wafer, were fabricated at the Stanford Nanofabrication Facility, Stanford, California, USA. They have 71-μm-inter-electrode spacing, active edges and a compatible geometry to the ATLAS pixel detector readout electronics. Several samples were irradiated with neutrons to different doses up to an equivalent fluence of 8.6×10¹⁵ n_{1 MeVeq} cm⁻². This corresponds to the integrated fluence expected after 5 years at the Large Hadron Collider (LHC) with a luminosity of 10³⁵ cm⁻² s⁻¹ at 4 cm from the interaction point, where the ATLAS B-Layer is placed. Before and after irradiation, signals were generated by a 1060 nm infrared laser calibrated to inject a charge of 14 fC. This corresponds to 3.5 minimum ionizing particles and should not perturb the charge status of the radiation-induced defects.