3D active edge silicon sensors with different electrode configurations: Radiation hardness and noise performance

详细信息    查看全文

• 作者：C. Da Viá ; E. Bolle ; K. Einsweiler ; M. Garcia-Sciveres ; J. Hasi ; C. Kenney ; V. Linhart ; Sherwood Parker ; S. Pospisil ; O. Rohne ; T. Slavicek ; S. Watts ; N. Wermes
• 关键词：3D silicon detectors ; Active edges ; Radiation hardness ; Large Hadron Collider ; SLHC ; Forward proton tagging
• 刊名：Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
• 出版年：2009
• 出版时间：11 June 2009
• 年：2009
• 卷：604
• 期：3
• 页码：505-511
• 全文大小：701 K

文摘

3D detectors, with electrodes penetrating the entire silicon wafer and active edges, were fabricated at the Stanford Nano Fabrication Facility (SNF), California, USA, with different electrode configurations. After irradiation with neutrons up to a fluence of 8.8×10¹⁵ n_eq cm⁻², they were characterised using an infrared laser tuned to inject 2 minimum ionising particles showing signal efficiencies as high as 66 % for the configuration with the shortest (56 μm) inter-electrode spacing. Sensors from the same wafer were also bump-bonded to the ATLAS FE-I3 pixel readout chip and their noise characterised. Most probable signal-to-noise ratios were calculated before and after irradiation to be as good as 38:1 after the highest irradiation level with a substrate thickness of 210 μm. These devices are promising candidates for application at the LHC such as the very forward detectors at ATLAS and CMS, the ATLAS B-Layer replacement and the general pixel upgrade. Moreover, 3D sensors could play a role in applications where high speed, high-resolution detectors are required, such as the vertex locators at the proposed Compact Linear Collider (CLIC) at CERN.