Spatial correlation effects of charged impurities on electron mobility in δ-doped quantum barriers

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• 作者：Koenraad ; P. M. ; Shi ; J. M. ; van de Stadt ; A. F. W. ; Smets ; A. ; Wolter ; J. H. ; Peeters ; F. M. ; et. al.
• 刊名：Superlattices and Microstructures
• 出版年：1997
• 出版时间：March, 1997
• 年：1997
• 卷：21
• 期：2
• 页码：237-240
• 全文大小：138 K

文摘

The quantum mobility has been measured in δ-doped GaAs/Al_xGa_1−xAs/GaAs structures in which one is able to vary the population of DX states. The experiments show that spatial correlations in the charge distribution enhance the quantum mobility. We are able to correctly account for these correlation effects in the mobility calculations.