Terahertz transport dynamics in the metal-insulator transition of V₂O₃ thin film

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• 作者：Y.Y. Luo^a ; ^{yyluo@issp.ac.cn} ; F.H. Su^a ; ^{fhsu@issp.ac.cn} ; C. Zhang^a ; L. Zhong^a ; ^b ; S.S. Pan^a ; S.C. Xu^a ; H. Wang^a ; ^b ; J.M. Dai^a ; G.H. Li^a ; ^b ; ^{ghli@issp.ac.cn}
• 关键词：V2O3 thin film ; Terahertz ; Metal-insulator transition ; Drude-Smith model ; Optical conductivity
• 刊名：Optics Communications
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：387
• 期：Complete
• 页码：385-389
• 全文大小：802 K
• 卷排序：387

文摘

Adjust the THz optical conductivity of V2O3 by changing the external temperature. The THz amplitude modulation can reach as high as 74.7%. THz conductivity of metal-phase V2O3 can be well-fitted by the Drude-Smith model. Revealed that the electron scattering processes depend on the temperature.