Enhanced thermoelectric performance of p-type SnSe doped with Zn

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• 作者：J.C. Li^a ; ^b ; D. Li^a ; ^{lidi@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; X.Y. Qin^a ; ^{xyqin@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author} ; J. Zhang^a ; ^{zhangjian@issp.ac.cn" class="auth_mail" title="E-mail the corresponding author}
• 关键词：Thermoelectric materials ; SnSe doped ; Hot-pressing
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：1 January 2017
• 年：2017
• 卷：126
• 期：Complete
• 页码：6-10
• 全文大小：1094 K

文摘

In this study, we have synthesized SnSe doped with zinc (Zn) and investigated the effect of Zn doping on the thermoelectric properties of SnSe. The results demonstrate that a high thermoelectric figure of merit (ZT) of 0.96 at 873 K is obtained for Zn_0.01Sn_0.99Se, which is 41% higher than that of pure SnSe (ZT = 0.68). The value is the highest value reported for p-type polycrystalline doped SnSe materials, which arises from the increased power factor coming from a high electrical conductivity and an enhanced Seebeck coefficient.