Cu₂ZnSnSe₄ thin films grown by molecular beam epitaxy

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• 作者：Y. Curé ; ^a ; ^b ; S. Pouget^a ; ^b ; V. Reita^a ; ^c ; H. Boukari^a ; ^c ;
• 关键词：Molecular beam epitaxy ; Photovoltaics ; Thin films ; Semiconductors
• 刊名：Scripta Materialia
• 出版年：2017
• 出版时间：15 March 2017
• 年：2017
• 卷：130
• 期：Complete
• 页码：200-204
• 全文大小：865 K
• 卷排序：130

文摘

Cu2ZnSnSe4 has a potential for photovoltaic cells but the performances must be improved. Here, we report on CZTSe grown by molecular beam epitaxy. A smooth 2D growth mode was maintained during the deposition except for the early stage of the deposition where nanometer islands formed. This initial 3D growth is attributed to the formation of CuGaSe2 and CuGaZnSe3 detected by X-ray diffraction. Reflection of high energy diffraction oscillations, correlated to the growth rate, were obtained. The Cu2ZnSnSe4 film grew epitaxially on GaAs with its c-axis oriented along the GaAs[001] growth direction and Cu2ZnSnSe4(001)[110] parallel to GaAs(001)[110].