Short circuit current and efficiency improvement of SiGe solar cell in a GaAsP-SiGe dual junction solar cell on a Si substrate
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- 作者：Xin Zhaoa ; x.zhao@student.unsw.edu.au" class="auth_mail" title="E-mail the corresponding author ; Dun Lia ; Tian Zhanga ; Brianna Conrada ; Li Wanga ; Anastasia H. Soeriyadia ; Jianshu Hana ; Martin Diaza ; Anthony Lochtefeldb ; Andrew Gergerc ; Ivan Perez-Wurfla ; Allen Barnetta
- 关键词：Silicon germanium solar cell ; Gallium arsenide phosphide ; Solar cell design ; Material and device analysis
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2017
- 出版时间：January 2017
- 年：2017
- 卷：159
- 期：Complete
- 页码：86-93
- 全文大小：3299 K
文摘
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A numerical model was established to predict the spectral response of SiGe cells.
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Highest short circuit current and efficiency were measured for low bandgap SiGe cells.
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Performances of SiGe cells with varied structures were analyzed numerically.
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The Ge mole fractions were compared with high resolution X-ray diffraction scans.