Anisotropic etching and formation of pyramidal textures by ACIDIC etching mixtures.
Unusual formation of random inverted pyramids by stirring of the etching mixture.
High etch rates up to 13.3 nm s−1 at 20 °C (comparable to KOH-IPA at 75 °C).
Lower reflectivities than KOH-IPA treated wafers at relevant etch depths.
Better performance is shown by simulations of PERC solar cells.
Potential for less cleaning efforts due to the high solubility of metals in HCl.