Interdiffusion in epitaxial, single-crystalline Au/Ag thin films studied by Auger electron spectroscopy sputter-depth profiling and positron annihilation

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• 作者：Martin A. Noah^a ; ^{m.noah@is.mpg.de" class="auth_mail" title="E-mail the corresponding author} ; David Flö ; totto^a ; ¹ ; Zumin Wang^a ; ^b ; Markus Reiner^c ; Christoph Hugenschmidt^c ; Eric J. Mittemeijer^a ; ^d
• 关键词：Interdiffusion ; Single crystal ; Vacancies ; Auger electron spectroscopy (AES) ; Positron annihilation Doppler broadening spectroscopy (DBS)
• 刊名：Acta Materialia
• 出版年：2016
• 出版时间：1 April 2016
• 年：2016
• 卷：107
• 期：Complete
• 页码：133-143
• 全文大小：1287 K

文摘

Interdiffusion in epitaxial, single-crystalline Au/Ag bilayered thin films on Si (001) substrates was investigated by Auger electron spectroscopy (AES) sputter-depth profiling and by in-situ positron annihilation Doppler broadening spectroscopy (DBS). By the combination of these techniques identification of the role of vacancy sources and sinks on interdiffusion in the Au/Ag films was possible. It was found that with precise knowledge of the concentration-dependent self-diffusion and impurity diffusion coefficients a distinction between the Darken-Manning treatment and Nernst-Planck treatment can be made, which is not possible on the basis of the determined concentration-depth profiles alone.