Defect evolution and photoluminescence in anion-defective alumina single crystals exposed to high doses of gamma-rays
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文摘

PL of alumina exposed to high doses was measured under UV and VUV excitations.

The emission of F+ and F-centers decreases with a growing dose.

New wide emission bands appear in the PL spectrum after irradiation.

Oxygen divacancies are formed under high-dose irradiation of alumina crystals.

High-dose exposure intensifies PL in the red–NIR spectral region.

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