Characterization of the cleaved edge cross section of the heterostructures with GaMnAs layer by the confocal micro-Raman spectroscopy

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• 作者：A.V. Kudrin^a ; ^{kudrin@nifti.unn.ru} ; S.M. Plankina^a ; O.V. Vikhrova^a ; A.V. Nezhdanov^a ; A.I. Mashin^a ; Yu.N. Drozdov^b ; A.V. Shvetsov^a
• 关键词：Raman spectroscopy ; Semiconductor heterostructures ; Spintronics
• 刊名：Micron
• 出版年：2017
• 出版时间：February 2017
• 年：2017
• 卷：93
• 期：Complete
• 页码：38-42
• 全文大小：1797 K
• 卷排序：93

文摘

The cross section of sub-micron thick heterostructures was investigated by the micro-Raman spectroscopy (MRS). The shift of a TO mode position in top GaMnAs layers associated with elastic strains was observed. The MRS is appropriate for the analysis of heterostructures with the thickness comparable to an analyzing laser spot size.