Optical and electrical properties of H and V co-doped ZnO films sputtered at room temperature

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• 作者：Xudong Meng^a ; ^b ; Wei Zheng^a ; ^b ; Bing Han^a ; ^b ; Shuo Li^a ; ^b ; Junping Cai^c ; Fu Yang^a ; ^b ; Jingyu Nan^a ; ^b ; Yanfeng Wang^a ; ^b ; ^d ; ^{yanfengwangnk@163.com" class="auth_mail" title="E-mail the corresponding author}
• 关键词：HVZO films ; Magnetron sputtering ; Solar cells
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：128
• 期：Complete
• 页码：297-303
• 全文大小：1068 K

文摘

Vanadium-doped ZnO (VZO) transparent conductive films have been prepared by radio frequency magnetron sputtering with a ceramic target (99 wt.% ZnO, 1 wt.% V₂O₅) in different Ar and H₂ atmospheric conditions at room temperature. The influence of H₂ flow rates on the structural, morphological, electrical and optical properties of the VZO film were systematically investigated. The results indicate that H₂ flow rate considerably influenced the above-mentioned properties of VZO films. Incorporation of an optimum amount H during the VZO film deposition process dramatically improved the crystallinity, average particle size, conductivity, and transmittance of the VZO films. H and V co-doped ZnO (HVZO) films with optimal electrical and optical properties, a resistivity of 9.26 × 10⁻⁴ Ω cm and an average transmittance of about 85% (from 400 to 1200 nm), were obtained at a H₂ flow rate of 1.8 sccm.