Structural and magnetic properties of Co-N thin films deposited using magnetron sputtering at 523 K

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• 作者：Nidhi Pandey^a ; Mukul Gupta^a ; ^{mgupta@csr.res.in} ; ^{dr.mukul.gupta@gmail.com} ; Rachana Gupta^b ; Sujay Chakravarty^c ; Neeraj Shukla^c ; Anton Devishvili^d ; ^e ; ^f
• 关键词：Cobalt nitride thin films ; Tetra cobalt nitride ; Reactive nitrogen sputtering
• 刊名：Journal of Alloys and Compounds
• 出版年：2017
• 出版时间：15 February 2017
• 年：2017
• 卷：694
• 期：Complete
• 页码：1209-1213
• 全文大小：753 K
• 卷排序：694

文摘

Cobalt nitride thin films deposited using reactive magnetron sputtering at 523 K. Physical, electronic and magnetic properties of Co-N thin films were studied. Co-N films formed at 523 K have fcc structure and high magnetic moment. Independent of gas flow used during sputtering Co-N phases formed are identical. It was found that at 523 K, N concentration in Co-N films is only few at.%.