Amorphous indium tin oxide films deposited on flexible substrates by facing target sputtering at room temperature

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• 作者：Yu Xiao^a ; Fangyuan Gao^a ; ^{gaofangyuan@buaa.edu.cn" class="auth_mail} ; Guobo Dong^a ; Tingting Guo^a ; Qirong Liu^a ; Di Ye^b ; Xungang Diao^a
• 关键词：Indium tin oxide ; Facing target sputtering ; Transparent conductors ; Polyethylene terephthalate
• 刊名：Thin Solid Films
• 出版年：1 April, 2014
• 年：2014
• 卷：556
• 期：Complete
• 页码：155-159
• 全文大小：579 K

文摘

Indium tin oxide (ITO) thin films were deposited on polyethylene terephthalate substrates using a DC facing target sputtering (DC-FTS) system at room temperature. The sputtering conditions including oxygen partial pressure and discharge current were varied from 0% to 4% and 0.5 A to 1.3 A, respectively. X-ray diffraction and scanning electron microscopy were used to study the structure and surface morphology of as-prepared films. All the films exhibited amorphous structures and smooth surfaces. The dependence of electrical and optical properties on various deposition parameters was investigated by a linear array four-point probe, Hall-effect measurements, and ultraviolet/visible spectrophotometry. A lowest sheet resistance of 17.4 惟/square, a lowest resistivity of 3.61 脳 10^鈭?#xA0;4 惟 cm, and an average relative transmittance over 88% in the visible range were obtained under the optimal deposition conditions. The relationship between the Hall mobility (渭) and carrier concentration (n) was interpreted by a functional relation of 渭 ~ n^{鈭?#xA0;0.127}, which indicated that ionized donor scattering was the dominant electron scattering mechanism. It is also confirmed that the carrier concentration in ITO films prepared by the DC-FTS system is mainly controlled by the number of activated Sn donors rather than oxygen vacancies.