Experimental verification of the model for formation of double Shockley stacking faults in highly doped regions of PVT-grown 4H-SiC wafers
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- 作者：Yu Yanga ; 1 ; yu.yang@stonybrook.edu" class="auth_mail" title="E-mail the corresponding author ; Jianqiu Guoa ; jqguo123@gmail.com" class="auth_mail" title="E-mail the corresponding author ; Ouloide Gouea ; ouloide.goue@stonybrook.edu" class="auth_mail" title="E-mail the corresponding author ; Balaji Raghothamachara ; balaji.raghothamachar@stonybrook.edu" class="auth_mail" title="E-mail the corresponding author ; Michael Dudleya ; michael.dudley@stonybrook.edu" class="auth_mail" title="E-mail the corresponding author ; Gil Chungb ; gil.chung@dowcorning.com" class="auth_mail" title="E-mail the corresponding author ; Edward Sanchezb ; edward.sanchez@dowcorning.com" class="auth_mail" title="E-mail the corresponding author ; Jeff Quastb ; jeff.quast@dowcorning.com" class="auth_mail" title="E-mail the corresponding author ; Ian Manningb ; ian.manning@dowcorning.com" class="auth_mail" title="E-mail the corresponding author ; Darren Hansenb ; darren.hansen@dowcorning.com" class="auth_mail" title="E-mail the corresponding author
- 关键词：A1. Doping ; A1. Double Shockley stacking faults ; A1. Heat treatment ; A1. Rhombus-shaped ; A1. X-ray topography ; B1. 4H&ndash ; SiC
- 刊名：Journal of Crystal Growth
- 出版年：2016
- 出版时间：15 October 2016
- 年：2016
- 卷：452
- 期：Complete
- 页码：35-38
- 全文大小：2980 K
文摘
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DSSFs bounding partials have been verified to be Si-core for the leading and C-core for the trailing.
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g.b analysis and ray tracing simulation verify the preferential motion of the Si-core partials.
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HTEM image shows a (62) stacking sequence confirming the presence of double Shockley faults.